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        SRAM

        大容量SRAM是高存儲密度的靜態(tài)數(shù)據(jù)存儲器,由一個或多個SRAM基片采用立體封裝工藝堆疊而成。廣泛應(yīng)用于航空航天領(lǐng)域嵌入式計算機系統(tǒng)。

         

          產(chǎn)品特性


        總?cè)萘浚?/span>4M~32M;

        訪問速度:最快達(dá)15ns;

        數(shù)據(jù)寬度:8位,16位,32位,40位;

        電源電壓:3.3V,5V;

        典型產(chǎn)品輻照指標(biāo):

        TID: 100 kradSi

        SEL: 99.8 Mev·cm2/mg

        SEU: 0.7 Mev·cm2/mg

        工作溫度:-55~125℃。

         

           產(chǎn)品列表



        #

        SRAM

        存儲容量(bit)

        存儲組織

        電壓

        訪問速度

        抗輻射

        封裝

        溫度等級

        篩選等級

        質(zhì)量等級

        TID 1)

        SEL 2)

        SEU 3)

        1

        VDSR4M08xS44xx1C12

        4M

        512k*8

        5V

        15 ns

        100

        59

        0.2

        SOP44

        E,I,M

        E,B,M,S

        EE, IB, MM, MS

        2

        VDSR4M08xS44xx1V12

        4M

        512k*8

        3.3V

        15 ns

        100

        27

        0.2

        SOP44

        E,I,M

        E,B,M,S

        EE, IB, MM, MS

        3

        VDSR8M16xS54xx2C12

        8M

        512K*16

        5V

        15 ns

        >50

        >75

        >2

        SOP54

        E,I,M

        E,B,M,S

        EE, IB, MM, MS

        4

        VDSR8M16xS54xx2V12

        8M

        512K*16

        3.3V

        15 ns

        >100

        >75

        >0.9

        SOP54

        E,I,M

        E,B,M,S

        EE, IB, MM, MS

        5

        VDSR8M32xS64xx2V12

        8M

        256k*32

        3.3V

        15 ns

        100

        99.8

        0.7

        SOP64

        E,I,M

        E,B,M,S

        EE, IB, MM, MS

        6

        VDSR16M08XS44XX4C12

        16M

        2M*8

        5V

        15 ns

        100

        59

        0.2

        SOP44

        E,I,M

        E,B,M,S

        EE, IB, MM, MS

        7

        VDSR16M16xS54xx4C12

        16M

        1M*16

        5V

        15 ns

        >50

        >75

        >2

        SOP54

        E,I,M

        E,B,M,S

        EE, IB, MM, MS

        8

        VDSR16M16xS54xx4V12

        16M

        1M*16

        3.3V

        15 ns

        100

        >81.4

        <8.94

        SOP54

        E,I,M

        E,B,M,S

        EE, IB, MM, MS

        9

        VDSR16M32xS64xx4C12

        16M

        512k*32

        5V

        15 ns

        >50

        >75

        >2

        SOP64

        E,I,M

        E,B,M,S

        EE, IB, MM, MS

        10

        VDSR16M32xS64xx4V12

        16M

        512k*32

        3.3V

        15 ns

        100

        >76.5

        >1.7

        SOP64

        E,I,M

        E,B,M,S

        EE, IB, MM, MS

        11

        VDSR20M40xS84xx2V12

        20M

        512k*40

        3.3V

        15 ns

        >100

        >75

        >0.9

        SOP84

        E,I,M

        E,B,M,S

        EE, IB, MM, MS

        12

        VDSR20M40xS84xx6V12

        20M

        512k*40

        3.3V

        15 ns

        >100

        >75

        >0.9

        SOP84

        E,I,M

        E,B,M,S

        EE, IB, MM, MS

        13

        VDSR32M32xS68xx8V12

        32M

        1M*32

        3.3V

        15 ns

        >100

        >75

        >0.9

        SOP68

        E,I,M

        E,B,M,S

        EE, IB, MM, MS

        14

        VDSR32M32xS68xx8V12-

        32M

        1M*32

        3.3V

        15 ns

        >100

        >75

        >0.9

        SOP68

        E,I,M

        E,B,M,S

        EE, IB, MM, MS


             1)、TID: Total DoseKrads(Si)

        2)、SEL: LET ThresholdMev.cm2/mg

        3)、SEU:SEU Threshold Mev.cm2/mg

          

           相關(guān)下載


        VDSR4M08xS44xx1C12 user manual.pdf

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